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  0.0066 Datasheet PDF File

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    SANYO
Part No. 2SC4671
OCR Text ... unit:mm 2064 [2SC4671] 2.5 1.0 1.45 6.9 Features * High DC current gain. * Wide ASO. * On-chip Zener diode of 6010V between collector and base. * Uniformity in collector-to-base voltage. * Large inductive load handling capability. 4...
Description NPN Epitaxial Planar Silicon Darlington Transistor Various Drivers Applications

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    2SC4809J

Panasonic, Corp.
Panasonic Semiconductor
Part No. 2SC4809J
OCR Text 0.05 -0.03 1.000.05 0.800.05 For high-frequency amplification/oscillation/mixing Features * High transition frequency fT * Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (...
Description For high-frequency amplification/oscillation/mixing Si, NPN, RF SMALL SIGNAL TRANSISTOR

File Size 63.80K  /  3 Page

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    Panasonic
Part No. 2SC5063
OCR Text ...C) Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150 -55 to +150 Unit V 10.5min. 2.0 0.80.1 0.5max. 2.540.3 5.080.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to ba...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    SANYO
Part No. 2SC5069
OCR Text ...038A [2SC5069] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage ...
Description NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Driver Applications

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    2SC5370

SANKEN[Sanken electric]
Part No. 2SC5370
OCR Text ...2SC5370 10max 10max 40min 70min 0.3max 1.2max 90typ 120typ V V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB hFE Rank Conditions VCB=60V VEB=7V IC=25mA VCE=2V, IC=6A IC=6A, IB=0.3A IC...
Description SILICON NPN EPITAXIAL PLANAR TRANSISTOR(EMERGENCY LIGHTING INVERTER AND GENERAL PURPOSE)

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    TOSHIBA
Part No. 2SC5376F
OCR Text ...= 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA High Collector Current: IC = 400 mA (max) Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector p...
Description Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications

File Size 112.12K  /  6 Page

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    2SC5376F

Toshiba Semiconductor
Part No. 2SC5376F
OCR Text ...= 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA High Collector Current: IC = 400 mA (max) Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector p...
Description AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS

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    TOSHIBA
Part No. 2SC5376
OCR Text ...= 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA High collector current: IC = 400 mA (max) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Co...
Description Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications

File Size 145.28K  /  6 Page

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    2SC5379

Panasonic Corporation
Panasonic Semiconductor
Part No. 2SC5379
OCR Text ...60.15 s Features q q q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 Low noise figure NF. High gain. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the t...
Description SILICON NPN EPITAXIAL PLANER TYPE(FOR LOW-VOLTAGE LOW-NOISE HIGH-FREQUENCY OSCILLATION)

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    Panasonic
Part No. 2SC5914
OCR Text ...r TV, CRT monitor 15.50.5 (10.0) Unit: mm 3.20.1 5 (4.5) 3.00.3 5 Features * High breakdown voltage: VCBO 1 500 V * High-speed switching: tf < 200 ns * Wide safe operation area 26.50.5 (23.4) (2.0) 5 (4.0) 2.00.2 ...
Description Power Device - Power Transistors - Television/Display

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