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SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
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Part No. |
2SC4232
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OCR Text |
...
Tc = 25 (Recommended torque : 0.5Nm)
Ratings -55150 150 1200 800 7 2 4 1 2 70 0.8 Ratings Min 800 Max 0.1 Max 0.1 Max 0.1 Min 8 Min 7 Max 1.0 Max 1.5 Max 1.7 TYP 8 Max 0.5 Max 3.5 Max 0.3
Unit V V V A
A W Nm
Electrical Charact... |
Description |
Switching Power Transistor(2A NPN)
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File Size |
511.73K /
12 Page |
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it Online |
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Shindengen
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Part No. |
2SC4232
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OCR Text |
...
Tc = 25 (Recommended torque : 0.5Nm)
Ratings -55150 150 1200 800 7 2 4 1 2 70 0.8 Ratings Min 800 Max 0.1 Max 0.1 Max 0.1 Min 8 Min 7 Max 1.0 Max 1.5 Max 1.7 TYP 8 Max 0.5 Max 3.5 Max 0.3
Unit V V V A
A W Nm
Electrical Charact... |
Description |
High-Voltage High-Speed Switching Transistors / HFX Series
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File Size |
418.67K /
12 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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Part No. |
2SC4260
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OCR Text |
...G NF Min 25 -- -- -- -- 50 -- 3.0 -- -- Typ -- -- -- -- -- -- 0.85 3.8 19 8 Max -- 0.1 10 0.3 0.3 180 1.3 -- -- -- pF GHz dB dB Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 13 V, RBE = VEB = 3 V, IC = 0 I C = ... |
Description |
Silicon NPN Transistor Silicon NPN Epitaxial
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File Size |
23.60K /
5 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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Part No. |
2SC4261
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OCR Text |
...-- 1.8 -- Typ -- -- -- -- -- -- 0.7 2.4 200 Max -- 0.3 10 1.0 0.3 180 1.0 -- -- pF GHz mV Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA ... |
Description |
Silicon NPN Epitaxial
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File Size |
23.44K /
5 Page |
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it Online |
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Renesas
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Part No. |
2SC4261
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OCR Text |
...-- 1.8 -- Typ -- -- -- -- -- -- 0.7 2.4 200 Max -- 0.3 10 1.0 0.3 180 1.0 -- -- pF GHz mV Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA V... |
Description |
Transistors>Amplifiers/Bipolar
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File Size |
45.82K /
8 Page |
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it Online |
Download Datasheet
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hitachi
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Part No. |
2SC4261
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OCR Text |
...-- 1.8 -- Typ -- -- -- -- -- -- 0.7 2.4 200 Max -- 0.3 10 1.0 0.3 180 1.0 -- -- pF GHz mV Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA ... |
Description |
Silicon NPN Epitaxial From old datasheet system
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File Size |
15.31K /
4 Page |
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it Online |
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ST Microelectronics
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Part No. |
2SD1398
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OCR Text |
... GEOMETRY METALLIZATION OUT = 6.0 W MIN. WITH 10.0 dB GAIN
.230 6LFL (M142) epoxy sealed ORDER CODE SD1398 BRANDING SD1398
PIN CONNECTION
DESCRIPTION The SD1398 is a gold metallized epitaxial silicon NPN transistor designed for high ... |
Description |
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS
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File Size |
77.15K /
7 Page |
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it Online |
Download Datasheet
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Price and Availability
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