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  -160v Datasheet PDF File

For -160v Found Datasheets File :: 2377    Search Time::0.953ms    
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    AP15T20GS-HF14

Advanced Power Electronics Corp.
Part No. AP15T20GS-HF14
OCR Text ...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 45 72 nc q gs gate-source charge v ds =160v - 5.5 - nc q gd gate-drain ("miller") charge ...
Description Simple Drive Requirement

File Size 54.85K  /  4 Page

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    AP15T20GI-HF AP15T20GI-HF14

Advanced Power Electronics Corp.
Part No. AP15T20GI-HF AP15T20GI-HF14
OCR Text ...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 45 72 nc q gs gate-source charge v ds =160v - 5.5 - nc q gd gate-drain ("miller") charge ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 56.44K  /  4 Page

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    AP15T20GH-HF14

Advanced Power Electronics Corp.
Part No. AP15T20GH-HF14
OCR Text ...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 45 72 nc q gs gate-source charge v ds =160v - 5.5 - nc q gd gate-drain ("miller") charge ...
Description Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 54.81K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHY597230CM IRHY593230CM IRHY59230CM IRHY597230CM-15
OCR Text ... VDS > -15V, IDS = -5.0A VDS= -160v ,VGS=0V VDS = -160v, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-12V, ID = -8.0A VDS = -100V VDD = -100V, ID = -8.0A, VGS =-12V, RG = 7.5, IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate...
Description -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
8 A, 200 V, 0.515 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
Simple Drive Requirements

File Size 99.04K  /  8 Page

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    AP15T20AGH-HF14

Advanced Power Electronics Corp.
Part No. AP15T20AGH-HF14
OCR Text ...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 30 48 nc q gs gate-source charge v ds =160v - 5.5 - nc q gd gate-drain ("miller") charge ...
Description Simple Drive Requirement
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristics

File Size 117.72K  /  4 Page

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    AP08P20GS-HF14 AP08P20GS-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP08P20GS-HF14 AP08P20GS-HF-14
OCR Text ...e current (t j =125 o c) v ds =-160v, v gs =0v - - -250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-5a - 20 32 nc q gs gate-source charge v ds =-160v - 5 - nc q gd gate-drain ("miller") char...
Description Simple Drive Requirement

File Size 58.59K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHY57230CMSE JANSR2N7489T3
OCR Text ...mA VDS > 15V, IDS = 7.6A A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 12A VDS = 100V VDD = 100V, ID = 12A, VGS =12V, RG = 7.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Sourc...
Description Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

File Size 171.83K  /  8 Page

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    CPC7701

IXYS Corporation
Part No. CPC7701
OCR Text ... range, e.g. v pp /v nn : +40v/160v or +100v/100v, it is well suited for many medical and industrial applications such as medical ultrasound imaging, printers, and industrial measurement equipment. the bleed resistors enable the discha...
Description 16-Channel High Voltage Analog Switch with Integrated Bleed Resistors

File Size 860.93K  /  11 Page

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    IRF[International Rectifier]
Part No. IRHNJ8230 IRHNJ3230 IRHNJ4230 IRHNJ7230
OCR Text ...mA VDS > 15V, IDS = 6.0A A VDS= 160V, VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 9.4A VDS = 100V VDD = 100V, ID = 9.4A, RG = 7.5 VGS = 12V Measured from the center of drain pad to center of source pad VGS = ...
Description Simple Drive Requirements
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 125.98K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHNJ57230SE JANSR2N7486U3 IRHNJ57230SEPBF IRHNJ57230SE-15
OCR Text ...0mA VDS > 15V, IDS = 7.8A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 12A VDS = 100V VDD = 100V, ID = 12A, VGS =12V,RG = 7.5 ns nH Measured from the center of drain pad to center of source...
Description 12 A, 200 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package
Simple Drive Requirements

File Size 122.48K  /  8 Page

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For -160v Found Datasheets File :: 2377    Search Time::0.953ms    
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